Technical Publications of Dr. D. G.
Borse
1.
D. G. Borse, S. J. Vaidya, and A. N. Chandorkar, “Study of interface
trap generation due to high field stressing and its temperature dependence in
2.2 nm gate dielectrics”, IEEE
Transactions on Electron Devices, Vol. 49, No. 4, pp 699, April 2002.
2.
D. G. Borse, Manjula Rani K. N., A. N. Chandorkar, J. Vasi, V.
Ramgopal Rao, B. Cheng, and J.C.S. Woo, “Optimization and realization of sub 100 nm
channel length lateral asymmetric p-MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 6, pp 1077, July 2002.
3.
D. G. Borse, S. J. Vaidya, and A. N. Chandorkar, “Comparison of 4 nm
gate dielectrics grown in O2 and N2O ambient on the basis
of SILC and interface state generation due to field stressing”, Proceedings
of International Conference
on Communications, Computers &
Devices (ICCCD-2000), Vol. 1, pp
257, Dec. 2000.
4.
D. G. Borse, S. J. Vaidya, and A. N. Chandorkar, “Study of high quality
ultra thin oxides
for scaled MOS devices from
reliability point of view”, Proceeding
of National Seminar on VLSI System Design and Technology (VSDT-2000),
pp 24, Dec. 2000.
5.
D. G. Borse, S. J. Vaidya, and A. N. Chandorkar, “Comparison of 4 nm
dry and N2O nitrided gate dielectrics from reliability point of
view”, 43rd Dept.
of Atomic Energy (DAE) Solid State Physics Symposium 2000, (Dec. 26-31 2000), Dec. 2000.
6.
S.J. Vaidya, D.G. Borse, B. G. Tiwari, A. N. Chandorkar, D. K. Sharma,
and A.M. Shaikh, “Neutron radiation effects on nitrided pyrogenic field
oxides”, 43rd
Dept. of Atomic Energy (DAE) Solid State Physics Symposium 2000, Dec. 2000.
7.
S. J. Vaidya, D.G. Borse, A. N. Chandorkar, D. K. Sharma, and A. M.
Shaikh, “Non-Ionizing radiation effects in MOS structures”, International conference on Communications, Computers & Devices
(ICCCD-2000),
pp 163, Dec. 2000.